Technical Specification
Chamber: stainless steel front
loading box chamber, 400mm cubed (external dimensions), 25 x 27mm base
ports for tooling / sources, 3 x NW40CF top plate ports for substrate
rotation, temperature control, heating etc., 2 x NW40CF side wall ports,
1 x NW63CF front door view port with a periscope slide system allowing
for source viewing through the view port, an ISO100 rear wall pumping
port. Shielding is supplied.
Pumping:
process pressure dependant -
250, 360 or 500 l/sec turbo pump with vent valve, 8 m3
/hr rotary vane or 10m3
/hr dry scroll backing.
Pumping logic:
simple pump / vent panel and PLC contactor control for LV and HV
circuits.
Gauging:
Penning with HV set point as standard. Wide range gauge option.
Sources / techniques:
Capacitive RF bias stage - floating or earthed on
sample platen or RF stage or both
High temperature graphite heater ( 1200°C)
4 channel MFC control panel with high stability
pressure control system for etch / sputter
Reactive ion etch
option
Process Control:
HMI interface to PLC logic controller
Services
Water:
3 ltrs/ min at 2 bar 18°C
Gas:
N2 vent gas at 0.5 bar.
Process gases ( at 40 -60 p.s.i.) dependant upon application.
Electrical:
1P
230 vac 50 hz, 32A
Options
Vacuum gauge display
Fast vent
Fast chamber cycle
Chamber heating
Sample: heating,
cooling, bias, Z
Corrosive resistant
pumping
Dry pumping
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