Moorfield.co.uk

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Low temperature thermal / resistive deposition sources

  • Unique design for use with low temperature organics

  • Choice of 1cc or 10cc capacity

  • High deposition rates (circa 5 Å/sec) with good uniformity

  • PID control loop stable temperature

  • All UHV compatible

  • Crucible options available

  • Easily removed for cleaning

 

 

 

 

low temperature thermal source for OLED LTE1CC

LTE 1CC source

4 channel Low temperature thermal source controller for organics

4 channel heater controller with PID loop

Although low temperature evaporation has been utilised for many years, it was the push to organic electronic thin films which has popularised the technique (OLTE). Carbon reduction and the quest for alternative energy sources and low power devices at low manufacturing cost has been a catalyst for thin film exploration in the organic area. Organic light emitting diodes ( OLED's) and organic solar cells have been two major drivers in the popularity of the technique. 

The LTE1 and LTE10 low temperature evaporation sources have been specifically designed with the researcher and pilot line developer in mind. The device is compact, temperature stable under operating conditions making for tight deposition rate control. The design is modular which allows for the quick removal and strip down of the source. Replacement crucibles, heater element, thermocouple and stand-offs can be done with minimal downtime.

The PID loop heater controller uses industry standard temperature controls and software interface.

Low temperature thermal source control unit for OLED

single channel LTE power supply and control unit - rear panel

4 channel LTE power supply and control unit - front panel

4 channel LTE power supply and control unit - rear panel

Images and data below courtesy of Professor M Turner and Dr J Kettle University of Manchester, UK

Figure1 : Atomic Force Microscope (AFM) image showing the morphology of a 50nm pentacene film deposited using Moorfield’s LTE source.

 

Figure 2: Schematic of an Organic Field Effect Transistor (OFET) and transfer characteristics of the device

 

Figure 3: Example of variation in deposition rate from a target of 0.5Ås-1 using the LTE source for a 50nm film.  Deviation from the target rate remains less than 5% for the duration of the deposition.

 

 

 

Options:

  • Quartz standard crucibles ( alumina option)

  • Custom crucible with high aspect ration ( changes deposition angle)

  • Small aperture top plate

  • "Flip" or standard shutter

  • Base plate, CF, ISO flange mount or flying leads

  • Single or 4 channel controller

 

 

 

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